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BF721T1G

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BF721T1G

TRANS PNP 300V 0.05A SOT223

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BF721T1G is a PNP bipolar junction transistor designed for high voltage applications. It features a maximum collector current of 50 mA and a collector-emitter breakdown voltage of 300 V. With a transition frequency of 60 MHz, this device is suitable for signal amplification and switching in various electronic systems. The DC current gain (hFE) is a minimum of 50 at 25 mA and 20 V, and the collector-emitter saturation voltage is specified at 800 mV at 5 mA base current and 30 mA collector current. This component is supplied in a SOT-223 (TO-261) surface mount package, facilitating integration into compact circuit designs. The maximum power dissipation is 1.5 W, and it operates within an ambient temperature range of -65°C to 150°C. This transistor is commonly utilized in power management, industrial control, and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic800mV @ 5mA, 30mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 25mA, 20V
Frequency - Transition60MHz
Supplier Device PackageSOT-223 (TO-261)
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max1.5 W

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