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BF493SG

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BF493SG

TRANS PNP 350V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BF493SG is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector current (Ic) of 500 mA and a collector-emitter breakdown voltage (Vce) of 350 V. With a transition frequency (fT) of 50 MHz, it is suitable for various signal processing tasks. The minimum DC current gain (hFE) is 40 at 10 mA collector current and 10 V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at 2 V maximum for a base current of 2 mA and a collector current of 20 mA. The transistor's maximum power dissipation is 625 mW. It is packaged in a TO-92 (TO-226) through-hole form factor and operates within a temperature range of -55°C to 150°C. This device finds application in consumer electronics, industrial control systems, and telecommunications equipment.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 2mA, 20mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 10V
Frequency - Transition50MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)350 V
Power - Max625 mW

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