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BF422ZL1G

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BF422ZL1G

TRANS NPN 250V 0.05A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BF422ZL1G is an NPN bipolar junction transistor designed for applications requiring high voltage and low current. This component features a maximum collector-emitter breakdown voltage of 250 V and a continuous collector current capability of 50 mA. With a transition frequency of 60 MHz, it is suitable for moderate-frequency signal amplification and switching tasks. The device offers a minimum DC current gain (hFE) of 50 at 25 mA collector current and 20 V collector-emitter voltage, with a saturation voltage (Vce(sat)) of 500 mV at 2 mA base current and 20 mA collector current. Rated for a maximum power dissipation of 830 mW, it is housed in a TO-92 (TO-226) package with formed leads, facilitating through-hole mounting. The operating temperature range is -55°C to 150°C (TJ). This transistor is commonly utilized in general-purpose amplification, voltage regulation, and switching circuits across various industrial and consumer electronics sectors. The BF422ZL1G is supplied in Tape & Box packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 25mA, 20V
Frequency - Transition60MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)250 V
Power - Max830 mW

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