BF422RL1G
TRANS NPN 250V 0.05A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BF422RL1G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage (Vce) of 250V and a continuous collector current (Ic) capability of 50mA. With a transition frequency (fT) of 60MHz, it is suitable for moderate frequency circuits. The device offers a minimum DC current gain (hFE) of 50 at 25mA collector current and 20V collector-emitter voltage. The BF422RL1G is packaged in a TO-92 (TO-226) through-hole package, presented on a tape and reel for automated assembly. Its maximum power dissipation is rated at 830mW, and it operates within an ambient temperature range of -55°C to 150°C. This transistor is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 25mA, 20V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 830 mW |
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