BF422G
TRANS NPN 250V 0.05A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BF422G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector emitter breakdown voltage (Vce) of 250 V and a continuous collector current (Ic) capability of 50 mA. With a transition frequency (fT) of 60 MHz and a maximum power dissipation of 830 mW, the BF422G is suitable for use in low-power RF circuits, audio amplification stages, and general control applications. It exhibits a minimum DC current gain (hFE) of 50 at 25 mA collector current and 20 V collector emitter voltage. The Vce (sat) is specified at a maximum of 500 mV for 2 mA base current and 20 mA collector current. The BF422G is supplied in a TO-92 (TO-226) through-hole package, facilitating traditional PCB assembly. Operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 25mA, 20V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 830 mW |
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