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BDX33B

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BDX33B

TRANS NPN DARL 80V 10A TO220

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi BDX33B is an NPN Darlington bipolar junction transistor designed for power switching and amplification applications. This component features a 10A continuous collector current (Ic) capability and a maximum collector-emitter breakdown voltage (Vce) of 80V. The device exhibits a minimum DC current gain (hFE) of 750 at 3A and 3V, with a Vce(sat) of 2.5V at 6mA and 3A. With a maximum power dissipation of 70W, it is suitable for use in industrial automation, power supplies, and motor control systems. The BDX33B is housed in a TO-220-3 package, allowing for through-hole mounting. It operates within a temperature range of -65°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 6mA, 3A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 3A, 3V
Frequency - Transition-
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max70 W

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