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BDW93CTU

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BDW93CTU

TRANS NPN DARL 100V 12A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BDW93CTU is a high-power NPN Darlington bipolar junction transistor. It features a 100V collector-emitter breakdown voltage and a maximum collector current of 12A, with a power dissipation capability of 80W. This device offers a substantial DC current gain (hFE) of 750 minimum at 5A and 3V. The saturation voltage (Vce Sat) is a maximum of 3V at 100mA base current and 10A collector current. Designed for through-hole mounting in the industry-standard TO-220-3 package, the BDW93CTU is suitable for applications requiring high current gain and switching capability. Typical industries utilizing this component include industrial automation and power supply circuits. The device is supplied in a tube package.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 5A, 3V
Frequency - Transition-
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max80 W

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