BDW23ATU
TRANS NPN 60V 6A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BDW23ATU is a high-power NPN bipolar junction transistor (BJT) housed in a TO-220-3 package. Designed for demanding applications, this component offers a continuous collector current of 6 A and a collector-emitter breakdown voltage of 60 V. Its robust construction supports a maximum power dissipation of 50 W, operating efficiently up to a junction temperature of 150°C. Key electrical specifications include a low saturation voltage of 3 V at 60 mA/6 A and a minimum DC current gain (hFE) of 750 at 2 A/3 V, ensuring high efficiency in switching and amplification circuits. This transistor is suitable for power supply regulation, audio amplification, and general-purpose switching applications across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 60mA, 6A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 50 W |
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