BDV65BG
TRANS NPN DARL 100V 10A TO247-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BDV65BG is an NPN Darlington bipolar junction transistor (BJT) designed for high-power switching applications. This through-hole component features a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of 10 A, with a maximum power dissipation of 125 W. The BDV65BG offers a high DC current gain (hFE) of at least 1000 at 5 A and 4 V, ensuring efficient amplification. Its saturation voltage (Vce Sat) is a maximum of 2 V at 20 mA base current and 5 A collector current. The device operates within a temperature range of -65°C to 150°C and is packaged in a TO-247-3. This transistor finds application in power management, motor control, and lighting control systems within industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 20mA, 5A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-247-3 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 125 W |
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