BDV65B
TRANS NPN DARL 100V 10A SOT93Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BDV65B is a high-power NPN Darlington bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a SOT-93 (TO-218-3) package, offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 10A. With a maximum power dissipation of 125W, it is suitable for applications requiring significant current handling and gain. The BDV65B exhibits a minimum DC current gain (hFE) of 1000 at 5A and 4V, and a Vce saturation of 2V at 20mA and 5A. Its operating temperature range spans from -65°C to 150°C. This device finds utility in power switching, motor control, and general-purpose amplification circuits within industrial and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-218-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 20mA, 5A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-93 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 125 W |
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