BDC01DRL1G
TRANS NPN 100V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BDC01DRL1G is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 500mA. The device exhibits a minimum DC current gain (hFE) of 40 at 100mA and 1V, with a transition frequency of 50MHz. It has a maximum power dissipation of 1W and a collector cutoff current (ICBO) of 100nA. The saturation voltage (Vce(sat)) is specified at 700mV maximum for an input base current of 100mA and a collector current of 1A. Packaged in a TO-92 (TO-226) through-hole configuration, this transistor is suitable for use in power supplies, industrial controls, and consumer electronics. The BDC01DRL1G is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 100mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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