BD810G
TRANS PNP 80V 10A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BD810G is a PNP bipolar junction transistor (BJT) designed for general-purpose power switching and amplification applications. This device features a maximum collector current (Ic) of 10 A and a collector-emitter breakdown voltage (Vce) of 80 V. With a transition frequency (fT) of 1.5 MHz and a power dissipation capability of 90 W, it is suitable for demanding applications. The DC current gain (hFE) is a minimum of 15 at 4 A and 2 V. The transistor exhibits a Vce(sat) of 1.1 V at 300 mA base current and 3 A collector current. Off-state characteristics include a collector cutoff current (ICBO) of 1 mA. Housed in a TO-220-3 package, the BD810G is presented in bulk packaging. This component finds utility in various industrial and consumer electronics sectors, including power supplies, motor control, and audio amplification. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.1V @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 1mA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 4A, 2V |
| Frequency - Transition | 1.5MHz |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 90 W |
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