BD809G
TRANS NPN 80V 10A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BD809G is an NPN bipolar junction transistor (BJT) designed for robust power switching applications. This component features a maximum collector current (Ic) of 10 A and a collector-emitter breakdown voltage (Vce) of 80 V. Its transition frequency is rated at 1.5 MHz, and it can dissipate up to 90 W of power. The transistor exhibits a minimum DC current gain (hFE) of 15 at 4 A and 2 V, with a Vce(sat) of 1.1 V at 300 mA collector current and 3 A base current. The BD809G is packaged in a TO-220-3 through-hole configuration, suitable for applications requiring reliable power handling. It is commonly utilized in power supplies, motor control circuits, and general-purpose amplification. The operating temperature range for this device is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.1V @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 1mA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 4A, 2V |
| Frequency - Transition | 1.5MHz |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 90 W |
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