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BD788G

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BD788G

TRANS PNP 60V 4A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi BD788G is a PNP bipolar junction transistor (BJT) designed for power switching and amplification applications. This device features a collector-emitter voltage breakdown of 60 V and a continuous collector current capability of 4 A, with a maximum power dissipation of 15 W. The BD788G exhibits a minimum DC current gain (hFE) of 40 at 200 mA collector current and 3 V Vce. Its transition frequency is rated at 50 MHz. The transistor is housed in a TO-126 (TO-225AA) through-hole package, suitable for robust mounting. Typical applications for this component include power supplies, motor control, and general-purpose amplification circuits within the industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 800mA, 4A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 3V
Frequency - Transition50MHz
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max15 W

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