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BD682TG

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BD682TG

TRANS PNP DARL 100V 4A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BD682TG is a PNP Darlington bipolar transistor featuring a 100V collector-emitter breakdown voltage and a 4A maximum collector current. This component offers a significant current gain (hFE) of 750 minimum at 1.5A and 3V. Designed for through-hole mounting in a TO-126 package, it dissipates a maximum power of 40W. Saturation voltage is specified at 2.5V maximum for 30mA base current and 1.5A collector current. The device operates across a temperature range of -55°C to 150°C. It is commonly utilized in power switching and amplification applications across various industrial sectors. The BD682TG is supplied in tube packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Frequency - Transition-
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max40 W

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