BD682T
TRANS PNP DARL 100V 4A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BD682T is a PNP Darlington bipolar transistor designed for high current applications. This through-hole component, housed in a TO-126 package, offers a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of up to 4 A. With a maximum power dissipation of 40 W, it features a substantial DC current gain (hFE) of at least 750 at 1.5 A and 3 V. The saturation voltage (Vce(sat)) is a maximum of 2.5 V at 30 mA base current and 1.5 A collector current. This device is suitable for use in power switching and linear amplification circuits across various industrial sectors. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 40 W |
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