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BD682STU

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BD682STU

TRANS PNP DARL 100V 4A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BD682STU is a PNP Darlington bipolar junction transistor designed for demanding applications. This component features a 100V collector-emitter breakdown voltage and a maximum collector current of 4A. With a significant power dissipation rating of 14W and a maximum junction temperature of 150°C, it is suitable for power switching and amplification tasks. The BD682STU exhibits a high minimum DC current gain (hFE) of 750 at 1.5A and 3V, ensuring robust amplification. Its saturation voltage is specified as a maximum of 2.5V at 30mA base current and 1.5A collector current. Packaged in a TO-126-3 (TO-225AA) through-hole configuration, this transistor finds utility in power supply regulation, audio amplification, and general-purpose switching circuits across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max14 W

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