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BD682S

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BD682S

TRANS PNP DARL 100V 4A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi BD682S is a PNP Darlington bipolar transistor designed for demanding applications. This component offers a 100V collector-emitter breakdown voltage and a continuous collector current rating of 4A, with a maximum power dissipation of 14W. It features a high DC current gain (hFE) of at least 750 at 1.5A and 3V, ensuring efficient amplification. The saturation voltage (Vce Sat) is specified at a maximum of 2.5V for a base current of 30mA and collector current of 1.5A. The device is housed in a TO-126-3 (TO-225AA) package for through-hole mounting. This transistor is commonly utilized in power switching, motor control, and general-purpose amplification circuits across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max14 W

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