Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

BD680G

Banner
productimage

BD680G

TRANS PNP DARL 80V 4A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi's BD680G is a PNP Darlington bipolar transistor engineered for robust performance. This component features a 80V collector-emitter breakdown voltage and a maximum collector current of 4A, with a significant power dissipation capability of 40W. It exhibits a minimum DC current gain (hFE) of 750 at 1.5A and 3V, and a Vce saturation of 2.5V at 30mA and 1.5A. The TO-126 package, also identified as TO-225AA, facilitates through-hole mounting. Operating across a temperature range of -55°C to 150°C, the BD680G is suitable for applications in industrial controls and power supply circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Frequency - Transition-
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max40 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MPSA92ZL1G

TRANS PNP 300V 0.5A TO92

product image
MJE371G

TRANS PNP 40V 4A TO126

product image
MMBTA06_D87Z

TRANS NPN 80V 0.5A SOT23-3