Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

BD680AS

Banner
productimage

BD680AS

TRANS PNP DARL 80V 4A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi BD680AS is a PNP Darlington bipolar transistor designed for robust performance in demanding applications. This through-hole component, housed in a TO-126-3 (TO-225AA) package, offers a collector-emitter breakdown voltage of 80 V and a maximum continuous collector current of 4 A. With a power dissipation capability of 14 W and a high DC current gain (hFE) of 750 minimum at 2A and 3V, it is well-suited for power switching and amplification circuits. The transistor exhibits a Vce(sat) of 2.8V maximum at 40mA base current and 2A collector current, with a collector cutoff current of 500µA maximum. Its operating junction temperature range extends to 150°C. Typical applications include power supply regulators, motor control, and general-purpose amplification in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.8V @ 40mA, 2A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A, 3V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max14 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MCH6203-TL-E

TRANS NPN 50V 1A 6MCPH

product image
BC560CTA

TRANS PNP 45V 0.1A TO92-3

product image
MJE371G

TRANS PNP 40V 4A TO126