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BD680AG

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BD680AG

TRANS PNP DARL 80V 4A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BD680AG is a PNP Darlington bipolar junction transistor (BJT) designed for robust power switching applications. This component features a maximum collector current (Ic) of 4A and a collector-emitter breakdown voltage (Vce(max)) of 80V. With a significant DC current gain (hFE) of at least 750 at 2A and 3V, it offers excellent amplification capabilities. The transistor exhibits a Vce saturation of 2.8V at 40mA and 2A, and a maximum power dissipation of 40W. Encased in a TO-126 (TO-225AA) through-hole package, the BD680AG is suitable for use in industrial automation, power supplies, and motor control systems. Its operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.8V @ 40mA, 2A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A, 3V
Frequency - Transition-
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max40 W

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