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BD679G

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BD679G

TRANS NPN DARL 80V 4A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BD679G is an NPN Darlington bipolar transistor designed for high-power switching and amplification applications. Featuring a robust TO-126 package, this component boasts a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 4A, with a maximum power dissipation of 40W. Its high DC current gain, a minimum of 750 at 1.5A and 3V, ensures efficient amplification. The transistor's saturation voltage is rated at a maximum of 2.5V at 30mA collector current and 1.5A. Operating within an extensive temperature range of -55°C to 150°C, the BD679G is suitable for demanding environments. This device finds application in industrial automation, power supplies, and motor control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Frequency - Transition-
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max40 W

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