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BD679ASTU

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BD679ASTU

TRANS NPN DARL 80V 4A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BD679ASTU is an NPN Darlington bipolar transistor designed for high-current switching and amplification applications. This component offers a continuous collector current (Ic) of up to 4A and a collector-emitter breakdown voltage (Vce) of 80V. Featuring a minimum DC current gain (hFE) of 750 at 2A and 3V, and a saturation voltage (Vce Sat) of 2.8V at 40mA and 2A, it ensures efficient operation. With a maximum power dissipation of 40W and an operating junction temperature of 150°C, it is suitable for demanding environments. The transistor is housed in a TO-126-3 package, facilitating through-hole mounting. This device is commonly utilized in power supply circuits, motor control, and general-purpose amplification within industrial and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.8V @ 40mA, 2A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A, 3V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max40 W

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