BD679AG
TRANS NPN DARL 80V 4A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BD679AG is an NPN Darlington bipolar transistor designed for robust power applications. This component features a collector-emitter breakdown voltage (Vce) of 80V and a maximum continuous collector current (Ic) of 4A, with a power dissipation of 40W. It exhibits a minimum DC current gain (hFE) of 750 at 2A and 3V, and a Vce(sat) of 2.8V at 40mA and 2A. The transistor is housed in a TO-126 package, suitable for through-hole mounting. The BD679AG is utilized in various industrial sectors, including power supplies, motor control, and lighting systems. It operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.8V @ 40mA, 2A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 40 W |
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