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BD678G

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BD678G

TRANS PNP DARL 60V 4A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi BD678G is a PNP Darlington bipolar transistor designed for robust power applications. This through-hole component, housed in a TO-126 package, offers a 60V collector-emitter breakdown voltage and a continuous collector current capability of 4A. The device exhibits a high DC current gain (hFE) of 750 minimum at 1.5A and 3V, indicative of its suitability for amplification and switching tasks requiring significant current gain. With a maximum power dissipation of 40W and a saturation voltage of 2.5V at 30mA base current and 1.5A collector current, the BD678G is engineered for efficient operation. Its operating temperature range of -55°C to 150°C (TJ) ensures reliability across diverse environmental conditions. This component finds application in power supply circuits, motor control, and general-purpose amplification within industrial and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Frequency - Transition-
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max40 W

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