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BD677ASTU

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BD677ASTU

TRANS NPN DARL 60V 4A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BD677ASTU is an NPN Darlington bipolar transistor designed for demanding applications. This device offers a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 4A, supported by a 40W power dissipation capability. It features a high minimum DC current gain (hFE) of 750 at 2A and 3V, ensuring significant amplification. The transistor exhibits a Vce(sat) of 2.8V at 40mA and 2A, and a collector cutoff current of 500µA. Packaged in a TO-126-3 (TO-225AA) through-hole configuration, it is suitable for industrial and power control systems. The operating junction temperature range is up to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.8V @ 40mA, 2A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A, 3V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max40 W

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