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BD676G

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BD676G

TRANS PNP DARL 45V 4A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi BD676G is a PNP Darlington bipolar transistor designed for high current applications. With a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 4A, this device is suitable for power switching and amplification tasks. The BD676G offers a high DC current gain of 750 minimum at 1.5A and 3V, ensuring efficient signal amplification. Its saturation voltage is 2.5V maximum at 30mA base current and 1.5A collector current. The transistor dissipates up to 40W and operates within a temperature range of -55°C to 150°C. Packaged in a TO-126 (TO-225AA) through-hole configuration, the BD676G finds utility in industrial control systems, power supplies, and motor drive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Frequency - Transition-
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max40 W

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