BD676AS
TRANS PNP DARL 45V 4A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BD676AS is a PNP Darlington bipolar junction transistor designed for demanding applications. This device features a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 4A, with a power dissipation of 14W. The BD676AS exhibits a minimum DC current gain (hFE) of 750 at 2A collector current and 3V Vce. Its collector-emitter saturation voltage (Vce Sat) is 2.8V maximum at 40mA base current and 2A collector current. The transistor is housed in a TO-126-3 (TO-225AA) package, suitable for through-hole mounting. Operating temperature range extends to 150°C (TJ). This component finds application in power switching, motor control, and general-purpose amplification across industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.8V @ 40mA, 2A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 14 W |
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