Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

BD676

Banner
productimage

BD676

TRANS PNP DARL 45V 4A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi BD676 is a PNP Darlington bipolar transistor designed for robust power applications. This through-hole component, housed in a TO-126 package, offers a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 4A. With a maximum power dissipation of 40W and a high DC current gain (hFE) of 750 minimum at 1.5A and 3V, the BD676 is suitable for power switching and amplification circuits. The device features a Vce(sat) of 2.5V maximum at 30mA base current and 1.5A collector current. Its operating temperature range is -55°C to 150°C. Common implementations include power supplies, motor control, and general-purpose amplification in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Frequency - Transition-
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max40 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MCH6203-TL-E

TRANS NPN 50V 1A 6MCPH

product image
BC560CTA

TRANS PNP 45V 0.1A TO92-3

product image
MJE371G

TRANS PNP 40V 4A TO126