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BD675

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BD675

TRANS NPN DARL 45V 4A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BD675 is a high-performance NPN Darlington bipolar junction transistor (BJT) designed for demanding applications. Featuring a collector-emitter voltage (Vce) breakdown of 45V and a maximum continuous collector current (Ic) of 4A, this component is rated for 40W of power dissipation. The BD675 exhibits a high DC current gain (hFE) of at least 750 at 1.5A and 3V, ensuring efficient signal amplification. Its saturation voltage (Vce(sat)) is a maximum of 2.5V at 30mA base current and 1.5A collector current. With a collector cutoff current (Ic(max)) of 500µA, it provides reliable performance in various switching and amplification circuits. The TO-126 package with through-hole mounting facilitates easy integration into printed circuit boards. This transistor is suitable for use in power switching, audio amplifiers, and general-purpose amplification across industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Frequency - Transition-
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max40 W

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