BD538KTU
TRANS PNP 80V 8A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BD538KTU is a PNP bipolar junction transistor (BJT) designed for robust power applications. This through-hole component features a breakdown voltage (Vceo) of 80V and a continuous collector current (Ic) capability of 8A, with a maximum power dissipation of 50W. Its transition frequency (fT) is 12MHz, suitable for moderate switching frequencies. The BD538KTU exhibits a minimum DC current gain (hFE) of 40 at 2A collector current and 2V Vce. Saturation voltage (Vce(sat)) is specified at a maximum of 800mV at 600mA base current and 6A collector current. The collector cutoff current (Icbo) is a maximum of 100µA. This device is packaged in a standard TO-220-3 configuration for ease of mounting and thermal management. It finds application in power switching circuits, linear voltage regulation, and general-purpose amplification within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 600mA, 6A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 2A, 2V |
| Frequency - Transition | 12MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 50 W |
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