BD537K
TRANS NPN 80V 8A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BD537K is an NPN bipolar junction transistor (BJT) designed for power switching and amplification applications. This through-hole component features a breakdown voltage of 80V (Vce) and a maximum continuous collector current (Ic) of 8A. With a power dissipation capability of 50W and a transition frequency of 12MHz, the BD537K is suitable for use in industrial control, power supply regulation, and automotive electronics. It exhibits a minimum DC current gain (hFE) of 40 at 2A collector current and 2V collector-emitter voltage, with a saturation voltage (Vce(sat)) of 800mV at 200mA base current and 2A collector current. The maximum collector cutoff current (Icbo) is 100µA. The component is supplied in a TO-220-3 package and operates at junction temperatures up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 2A, 2V |
| Frequency - Transition | 12MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 50 W |
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