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BD537J

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BD537J

TRANS NPN 80V 8A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi BD537J NPN Bipolar Junction Transistor (BJT). This through-hole component features a collector-emitter breakdown voltage of 80V and a continuous collector current of 8A, with a maximum power dissipation of 50W. The BD537J offers a minimum DC current gain (hFE) of 30 at 2A, 2V, and a transition frequency of 12MHz. Its saturation voltage (Vce Sat) is specified at 800mV maximum for 200mA base current and 2A collector current. The device operates within a temperature range of 150°C (TJ) and is supplied in a TO-220-3 package. This transistor is commonly utilized in power switching and amplification applications across industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic800mV @ 200mA, 2A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 2A, 2V
Frequency - Transition12MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max50 W

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