Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

BD536J

Banner
productimage

BD536J

TRANS PNP 60V 8A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi BD536J is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage (Vce) of 60 V and a continuous collector current (Ic) capability of up to 8 A. With a maximum power dissipation of 50 W and a transition frequency (fT) of 12 MHz, the BD536J is suitable for power switching circuits and audio amplification. It features a minimum DC current gain (hFE) of 30 at 2 A and 2 V. The saturation voltage (Vce(sat)) is a maximum of 800 mV at 600 mA collector current and 6 A base current. The device operates at junction temperatures up to 150°C and is supplied in a TO-220-3 package for through-hole mounting. Industries utilizing this component include industrial automation and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic800mV @ 600mA, 6A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 2A, 2V
Frequency - Transition12MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max50 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MJE200STU

TRANS NPN 25V 5A TO126-3

product image
MMBT2907-D87Z

TRANS PNP 40V 0.8A SOT23-3

product image
SMMBTA42LT3G

TRANS NPN 300V 0.5A SOT23-3