BD442S
TRANS PNP 80V 4A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BD442S is a PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a maximum collector current of 4A and a collector-emitter breakdown voltage of 80V. With a transition frequency of 3MHz and a maximum power dissipation of 36W, it is suitable for power switching and amplification circuits. The DC current gain (hFE) is a minimum of 40 at 500mA and 1V. The device exhibits a Vce saturation of 800mV at 200mA and 2A, with a collector cutoff current of 100µA. The BD442S is housed in a TO-126-3 (TO-225AA) package for through-hole mounting and operates at junction temperatures up to 150°C. This transistor is commonly utilized in industrial automation, power supplies, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 1V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 36 W |
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