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BD442

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BD442

TRANS PNP 80V 4A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi BD442 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vce) of 80V and a maximum continuous collector current (Ic) of 4A. With a maximum power dissipation of 36W, it is suitable for moderate power handling. The BD442 offers a minimum DC current gain (hFE) of 40 at 500mA and 1V, with a transition frequency of 3MHz. It is provided in a TO-126 package for through-hole mounting. Typical applications for this device include power supply circuits, audio amplifiers, and general switching in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic800mV @ 300mA, 3A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 500mA, 1V
Frequency - Transition3MHz
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max36 W

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