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BD439

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BD439

TRANS NPN 60V 4A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi BD439 is a bipolar junction transistor (BJT) with an NPN configuration. This through-hole component, packaged in a TO-126 (TO-225AA) case, offers a maximum collector current (Ic) of 4 A and a collector-emitter breakdown voltage (Vce) of 60 V. It features a transition frequency of 3 MHz and a maximum power dissipation of 36 W. The DC current gain (hFE) is at least 40 at 500 mA and 1 V, with a Vce(sat) not exceeding 800 mV at 300 mA collector current and the corresponding base drive. The BD439 is suitable for applications in power switching and general-purpose amplification across various industrial sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic800mV @ 300mA, 3A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 500mA, 1V
Frequency - Transition3MHz
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max36 W

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