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BD438TG

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BD438TG

TRANS PNP 45V 4A

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi BD438TG is a PNP Bipolar Junction Transistor (BJT) designed for general purpose amplification and switching applications. This through-hole component features a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 4A. The BD438TG offers a minimum DC current gain (hFE) of 85 at 500mA and 1V, with a transition frequency of 3MHz. It can dissipate up to 36W of power and operates within an extended temperature range of -55°C to 150°C. The transistor is supplied in a TO-126 (TO-225AA) package, suitable for applications in industrial control, automotive systems, and consumer electronics requiring robust power handling.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 300mA, 3A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce85 @ 500mA, 1V
Frequency - Transition3MHz
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max36 W

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onsemi manufactures power and analog semiconductor components focused on energy efficiency, sensing, and intelligent power management.

onsemi’s core components include:

  • Power semiconductors (MOSFETs, IGBTs, and SiC devices)
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onsemi is known for power, sensing, and energy-efficient semiconductor product lines used in automotive, industrial, and energy applications.

Key onsemi product lines include:

  • EliteSiC - silicon carbide (SiC) power devices for high-efficiency power conversion
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  • NCP / NCV series - power management ICs and automotive-grade solutions
  • FD / FDM series MOSFETs - discrete power transistors
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