BD436S
TRANS PNP 32V 4A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BD436S is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component is housed in a TO-126-3 (TO-225AA) package, facilitating easy integration into PCB layouts. It features a maximum collector current (Ic) of 4 A and a collector-emitter breakdown voltage (Vce) of 32 V. With a power dissipation capability of 36 W and an operating junction temperature up to 150°C, the BD436S offers robust performance. Its transition frequency is 3 MHz, and it exhibits a minimum DC current gain (hFE) of 40 at 10 mA collector current and 5 V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 500 mV at 200 mA base current and 2 A collector current. This transistor finds utility in various industrial and consumer electronics, including power supplies, motor control, and audio amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 5V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 36 W |
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