BD435G
TRANS NPN 32V 4A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BD435G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, packaged in a TO-126 (TO-225AA) case, offers a continuous collector current capability of 4A and a collector-emitter breakdown voltage of 32V. It features a maximum power dissipation of 36W and a transition frequency of 3MHz. The BD435G exhibits a minimum DC current gain (hFE) of 85 at 500mA and 1V, with a saturation voltage of 500mV at 200mA and 2A. Operating temperature range is from -55°C to 150°C. This device is commonly employed in power supply regulation, audio amplifiers, and general industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA, 1V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 36 W |
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