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BD435

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BD435

TRANS NPN 32V 4A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BD435 is an NPN Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 32V collector-emitter breakdown voltage and a maximum collector current of 4A. With a power dissipation capability of 36W and a transition frequency of 3MHz, it is suitable for use in industrial automation, power control, and consumer electronics. The minimum DC current gain (hFE) is 85 at 500mA and 1V. The transistor is housed in a TO-126 (TO-225AA) package for through-hole mounting and operates within a temperature range of -55°C to 150°C. The saturation voltage (Vce(sat)) is 500mV at 200mA collector current and 2A collector current.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce85 @ 500mA, 1V
Frequency - Transition3MHz
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)32 V
Power - Max36 W

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