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BD3796STU

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BD3796STU

TRANS NPN 80V 2A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BD3796STU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features an 80V collector-emitter breakdown voltage and a maximum continuous collector current of 2A, with a power dissipation capability of 25W. It is housed in a TO-126-3 (TO-225AA) package, suitable for through-hole mounting. Key specifications include a minimum DC current gain (hFE) of 40 at 150mA and 2V, and a collector cutoff current (ICBO) of 2µA. Saturation voltage (Vce) is specified at 1V maximum for 100mA collector current and 1A collector current, indicating efficient switching performance. This transistor is commonly utilized in power supplies, audio amplifiers, and automotive electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
Current - Collector Cutoff (Max)2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max25 W

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