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BD37925STU

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BD37925STU

TRANS NPN 80V 2A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BD37925STU is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 2A, with a maximum power dissipation of 25W. It is housed in a TO-126-3 (TO-225AA) package, suitable for through-hole mounting. Key electrical specifications include a minimum DC current gain (hFE) of 150 at 150mA and 2V, and a saturation voltage (Vce Sat) of 1V at 100mA and 1A. The collector cutoff current (ICBO) is rated at a maximum of 2µA. This transistor is commonly utilized in power switching and amplification circuits within industrial automation and power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
Current - Collector Cutoff (Max)2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 150mA, 2V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max25 W

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