BD37916STU
TRANS NPN 80V 2A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BD37916STU is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a maximum collector current (Ic) of 2 A and a collector-emitter breakdown voltage (Vce(max)) of 80 V. With a power dissipation capability of 25 W and a high operating junction temperature of 150°C, it is suitable for power switching and amplification tasks. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150 mA and 2 V, and a saturation voltage (Vce(sat)) of 1 V at 100 mA and 1 A. Packaged in a TO-126-3 (TO-225AA) through-hole configuration, the BD37916STU is commonly utilized in industrial power supplies, automotive electronics, and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 2µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 25 W |
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