BD3776STU
TRANS NPN 60V 2A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BD3776STU is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-126-3 (TO-225AA) package, offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 2A. With a power dissipation capability of 25W, it is suitable for power switching and amplification circuits. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 150mA and 2V, and a saturation voltage (Vce Sat) of 1V at 100mA and 1A. The collector cutoff current (ICBO) is rated at a maximum of 2µA. Operating temperatures can reach up to 150°C (TJ). This transistor finds application in various industrial and consumer electronics sectors, particularly where robust power handling and switching are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 2µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 25 W |
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