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BD37716STU

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BD37716STU

TRANS NPN 60V 2A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi BD37716STU is a bipolar junction transistor (BJT) with an NPN configuration. This component offers a collector-emitter breakdown voltage of 60 V and a maximum continuous collector current of 2 A. The BD37716STU handles a power dissipation of 25 W and features a through-hole mounting type in a TO-126-3 package. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150 mA and 2 V, and a Vce(sat) of 1 V at 100 mA and 1 A. The collector cutoff current (ICBO) is a maximum of 2 µA. This device is suitable for applications in power supply circuits and general-purpose amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
Current - Collector Cutoff (Max)2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 2V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max25 W

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