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BD244BG

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BD244BG

TRANS PNP 80V 6A TO220

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BD244BG is a PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This device features a collector-emitter breakdown voltage (Vce) of 80 V and a continuous collector current (Ic) capability of up to 6 A, with a maximum power dissipation of 65 W. It exhibits a minimum DC current gain (hFE) of 15 at 3 A and 4 V, and a transition frequency of 3 MHz. The BD244BG has a collector cutoff current (Ic) of 700 µA and a Vce(sat) of 1.5 V at 1 A, 6 A. Packaged in a TO-220-3 through-hole configuration, this transistor is suitable for power switching and amplification circuits across various industrial sectors including automotive, consumer electronics, and industrial automation. The operating temperature range is -65°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 1A, 6A
Current - Collector Cutoff (Max)700µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 3A, 4V
Frequency - Transition3MHz
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)6 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max65 W

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