BD243CTU
TRANS NPN 100V 6A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BD243CTU is a high-power NPN bipolar junction transistor (BJT) designed for general-purpose applications. This device features a maximum collector current (Ic) of 6 A and a collector-emitter breakdown voltage (Vce(max)) of 100 V, with a maximum power dissipation of 65 W. The BD243CTU exhibits a minimum DC current gain (hFE) of 15 at 3 A and 4 V, and a Vce(sat) of 1.5 V at 1 A and 6 A. With a junction temperature rating of 150°C, it is suitable for demanding environments. The device is packaged in a standard TO-220-3 through-hole configuration, commonly utilized in power switching, audio amplification, and voltage regulation circuits across industrial and consumer electronics sectors. The collector cutoff current (Icbo) is rated at a maximum of 700 µA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1A, 6A |
| Current - Collector Cutoff (Max) | 700µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 3A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 65 W |
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