BD242BG
TRANS PNP 80V 3A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BD242BG is a PNP Bipolar Junction Transistor (BJT) designed for robust power switching applications. This through-hole component, housed in a TO-220 package, offers a maximum collector current (Ic) of 3 A and a collector-emitter breakdown voltage (Vce) of 80 V. With a power dissipation capability of 40 W and a transition frequency of 3 MHz, it is suitable for general-purpose amplification and switching. Key parameters include a minimum DC current gain (hFE) of 25 at 1 A and 4 V, and a maximum Vce(sat) of 1.2 V at 600 mA and 3 A. The device operates across a broad temperature range of -65°C to 150°C. This component finds application in industrial power supplies, automotive electronics, and consumer appliances.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 600mA, 3A |
| Current - Collector Cutoff (Max) | 300µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 40 W |
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