Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

BD242ATU

Banner
productimage

BD242ATU

TRANS PNP 60V 3A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi BD242ATU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vce) of 60V and a continuous collector current (Ic) capability of 3A, with a maximum power dissipation of 40W. Key electrical parameters include a minimum DC current gain (hFE) of 25 at 1A and 4V, and a saturation voltage (Vce(sat)) of 1.2V at 600mA and 3A. The BD242ATU is housed in a TO-220-3 through-hole package, suitable for mounting on printed circuit boards. Its operating temperature range extends to 150°C (TJ). This transistor finds application in industrial automation, power management systems, and consumer electronics where robust performance is required.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.2V @ 600mA, 3A
Current - Collector Cutoff (Max)300µA
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1A, 4V
Frequency - Transition-
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max40 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MPSA92ZL1G

TRANS PNP 300V 0.5A TO92

product image
MJE371G

TRANS PNP 40V 4A TO126

product image
MMBTA06_D87Z

TRANS NPN 80V 0.5A SOT23-3